Unusual Photoluminescence Decay of Porous Silicon Prepared by Rapid Thermal Oxidation and Quenching in Liquid Nitrogen

• Wadayama Toshimasa

  Department of Materials Science, Graduate School of Engineering, Tohoku University

• Arigane Tuyoshi

  Department of Materials Science, Graduate School of Engineering, Tohoku University

• Hayamizu Kensho

  Department of Materials Science, Graduate School of Engineering, Tohoku University

• Hatta Aritada

  Department of Materials Science, Graduate School of Engineering, Tohoku University

Abstract

Rapid thermal oxidation and quenching in liquid nitrogen (RTOQN) has been examined on anodized porous silicon (PS). The as-anodized PS samples exhibit a photoluminescence peak at 750 nm that decays instantaneously upon discontinuance of 325-nm He–Cd laser irradiation. In contrast, PS samples after RTOQN show a luminescence peak at 560 nm that decays very slowly (>1 s). In this paper some detailed RTOQN conditions leading to such a slow-decay photoluminescence are defined.

Journal

• MATERIALS TRANSACTIONS

  MATERIALS TRANSACTIONS 43 (11), 2832-2837, 2002

  The Japan Institute of Metals and Materials

Keywords

• porous silicon; photoluminescence; thermal oxidation; photoluminescence decay; infrared absorption spectroscopy; X-ray photoelectron spectroscopy; Raman spectroscopy

Details

• CRID: 1390282679223023232
• NII Article ID: 130004451731
• NII Article ID: 10012328173
• NII Book ID: AA1151294X
• DOI: 10.2320/matertrans.43.2832
• COI: 1:CAS:528:DC%2BD3sXjtFGn
• ISSN: 13475320
• ISSN: 13459678
• ISSN: http://id.crossref.org/issn/09161821
• NDL BIB ID: 6367454
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6367454
• Web Site: https://www.jstage.jst.go.jp/article/matertrans/43/11/43_11_2832/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed