Preparation of N-type Silicon Carbide-Based Thermoelectric Materials by Spark Plasma Sintering

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The SiC/Si<SUB>3</SUB>N<SUB>4</SUB> sintered materials were prepared by Spark Plasma Sintering at 2000°C. The crystal structure of sintered materials is cubic β-SiC type with relative density higher than 80%. All sintered materials show n-type conduction and the carrier concentration increases with increasing Si<SUB>3</SUB>N<SUB>4</SUB> concentration. Seebeck coefficient α and electrical conductivity σ increased with increasing temperature indicating suitable for high temperature thermoelectric conversion. Thermoelectric properties are improved by addition of Si<SUB>3</SUB>N<SUB>4</SUB> and the power factor α<SUP>2</SUP>σ takes a maximum value at SiC–7 mass%Si<SUB>3</SUB>N<SUB>4</SUB>.

収録刊行物

  • Materials transactions

    Materials transactions 43(12), 3239-3241, 2002-12-01

    公益社団法人 日本金属学会

参考文献:  6件中 1-6件 を表示

被引用文献:  2件中 1-2件 を表示

各種コード

  • NII論文ID(NAID)
    10012329666
  • NII書誌ID(NCID)
    AA1151294X
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    13459678
  • NDL 記事登録ID
    6395719
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z53-J286
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
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