ミリ波加熱を用いて結晶化されたSrBi_2Ta_2O_9強誘電体薄膜の特性 Properties of Ferroelectric SrBi_2Ta_2O_9 Films Crystallized by Millimeter-wave Heating

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抄録

SrBi<SUB>2</SUB>Ta<SUB>2</SUB>O<SUB>9</SUB> (SBT) films were spin-coated on Pt/Ti/SiO<SUB>2</SUB>/Si, and subsequently annealed by millimeter-wave heating as well as electric furnace one. It was found that remnant polarization of films annealed by millimeter-wave was higher than those by electric furnace heating, and it was attributed to better crystallinity and suppression of formation of non-ferroelectric pyrochlore phase in the millimeter-wave annealing. Enhancement of diffusion by millimeter-wave irradiation is suggested to bring about improvement of crystallinity. Additionally, the Pt layer is considered to be kept at lower temperature due to lower millimeter-wave absorption of Pt, and inter-diffusion among SBT, Pt and Ti layers, which causes formation of non-ferroelectric pyrochlore phase, is inhibited.

収録刊行物

  • 粉体および粉末冶金

    粉体および粉末冶金 50(10), 774-779, 2003-10-15

    Japan Society of Powder and Powder Metallurgy

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各種コード

  • NII論文ID(NAID)
    10012452605
  • NII書誌ID(NCID)
    AN00222724
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    05328799
  • NDL 記事登録ID
    6743576
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-274
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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