Carrier Transport in Polycrystalline Silicon Photovoltaic Layer on Highly Textured Substrate

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著者

    • Muhida Riza Muhida Riza
    • Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
    • Okajima Masaya
    • Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
    • Matsui Takuya
    • Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
    • Toyama Toshihiko
    • Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
    • Okamoto Hiroaki
    • Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
    • Honda Shinya
    • Department of Photonics, Faculty of Science and Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
    • Takakura Hideyuki
    • Department of Photonics, Faculty of Science and Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
    • Hamakawa Yoshihiro
    • Department of Photonics, Faculty of Science and Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan

抄録

Electrical conductivities along the growth direction of undoped polycrystalline silicon (poly-Si) thin films deposited by plasma enhanced chemical vapor deposition on various textured substrates aiming for enhancing light trapping have been investigated using an AC conductivity measurement technique. Temperature dependence of electron and hole conductivities reveals that the Fermi level of poly-Si on the mildly textured substrates is located at the center of the band gap and this material is 'truly' intrinsic. On the other hand, poly-Si on the highly textured substrate exhibits $n$-type characteristic even though none of the deposition conditions for poly-Si is changed. The change in the electrical properties is induced by structural changes, especially the reduction in the degree of (220) crystallographic preferential orientation of poly-Si on highly textured substrates. Furthermore, photovoltaic performances of the poly-Si pin thin film solar cells fabricated on the textured substrates have been investigated and discussed from the result of electric-field-dependent carrier transport and collection.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 42(11), 6753-6758, 2003-11-15

    公益社団法人 応用物理学会

参考文献:  17件中 1-17件 を表示

  • <no title>

    MEIER J.

    Proc. 1st World Conference on Photovoltaic Energy Conversion (WCPEC). Hawaii, 1994 409, 1994

    被引用文献1件

  • <no title>

    YAMAMOTO K.

    Jpn.J.Appl.Phys. 33, L1751, 1994

    被引用文献5件

  • <no title>

    GREEN M. A.

    High Efficiency Silicon Solar Cells 69, 1987

    被引用文献3件

  • <no title>

    KLUTH O.

    Mater. Res. Soc. Symp. Proc. 557, 731, 1999

    被引用文献1件

  • <no title>

    NASUNO Y.

    Jpn. J. Appl. Phys. 40, L303, 2001

    被引用文献6件

  • <no title>

    VETTERL O.

    Solid State Phenom. 67-68, 101, 1999

    被引用文献2件

  • <no title>

    WYRSCH N.

    Mater. Res. Soc. Symp. Proc. 609, A15.1, 2000

    被引用文献1件

  • <no title>

    MATSUI T.

    Jpn. J. Appl. Phys. 41, 20, 2002

    被引用文献5件

  • <no title>

    KOCKA J.

    Mater. Res. Soc. Symp. Proc. 557, 483, 1999

    被引用文献1件

  • <no title>

    MATSUI T.

    Appl. Phys. Lett. 81, 4751, 2002

    被引用文献6件

  • <no title>

    MUHIDA R.

    Solid State Phenom. 93, 115, 2003

    被引用文献1件

  • <no title>

    IIDA H.

    IEEE Electron Devices Lett. 4, 157, 1983

    被引用文献1件

  • <no title>

    MATSUI T.

    Ph.D. Thesis, Graduate School of Engineering Science, Osaka University, 2002

    被引用文献2件

  • <no title>

    NASUNO Y.

    Appl. Phys. Lett. 78, 2330, 2001

    被引用文献3件

  • <no title>

    OKAMOTO H.

    J. Appl. Phys. 54, 3236, 1983

    被引用文献3件

  • <no title>

    MATSUI T.

    J. Non-Crystalline Solids 299-302, 1152, 2002

    DOI 被引用文献3件

  • <no title>

    GOERLITZER M.

    J.Non-Cryst.Solids 227-230, 996, 1998

    DOI 被引用文献2件

被引用文献:  1件中 1-1件 を表示

各種コード

  • NII論文ID(NAID)
    10012563605
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    6751968
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE  JSAP 
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