Thermoelectric Characteristics of Si/Ge Superlattice Thin Films at Temperatures Less Than 300 K

この論文にアクセスする

この論文をさがす

著者

    • Hamabe Makoto
    • Department of Engineering, Chubu University, Kasugai, Aichi 487-8501, Japan
    • Takahashi Hideaki
    • Department of Engineering, Chubu University, Kasugai, Aichi 487-8501, Japan
    • Yamaguchi Satarou
    • Department of Engineering, Chubu University, Kasugai, Aichi 487-8501, Japan
    • Komine Takashi
    • Ion Engineering Research Institute Corporation, 2-8-1 Tsuda-Yamate, Hirakata, Osaka 573-0128, Japan
    • Eura Takashi
    • Ion Engineering Research Institute Corporation, 2-8-1 Tsuda-Yamate, Hirakata, Osaka 573-0128, Japan
    • Okamoto Yoichi
    • Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239-8686, Japan
    • Morimoto Jun
    • Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239-8686, Japan

抄録

We have studied the thermoelectric characteristics of Si/GeAu superlattice thin films at temperatures ranging from 290 K to 75 K and compared them to those of the SiGeAu alloy thin film. In the annealed Si/GeAu superlattice, the electrical resistivity was lower than that of the unannealed Si/GeAu superlattice at all temperatures. The annealed Si/GeAu superlattice showed a high thermoelectric power of 105 μV/K at 290 K. At temperatures less than 200 K, however, the polarity of the thermoelectric power of the unannealed Si/GeAu superlattice switched from positive to negative and a large negative thermoelectric power of $-4.6$ mV/K was attained at 80 K. On the other hand, the characteristics of all samples showed no magnetic field effect at all temperatures. To explain the causes of the extremely small variations in the characteristics by the magnetic field effects, we calculated the transport coefficients for the SiGeAu alloy using the two-band parabolic model, and compared them to those of experimentally measured values. When a large amount of acceptor concentration from Au doping and the very low carrier mobility were assumed, similar transport coefficients to the measured ones resulted.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 42(11), 6779-6783, 2003-11-15

    公益社団法人 応用物理学会

参考文献:  17件中 1-17件 を表示

  • <no title>

    HICKS L. D.

    Phys. Rev. B 53, R10493, 1996

    被引用文献1件

  • <no title>

    KOGA T.

    Appl. Phys. Lett. 77, 1490, 2000

    被引用文献1件

  • <no title>

    BAYER H.

    Appl. Phys. Lett. 80, 1216, 2002

    被引用文献1件

  • <no title>

    HEREMANS J. P.

    Phys. Rev. Lett. 88, 216801, 2002

    被引用文献2件

  • <no title>

    KOGA T.

    Appl. Phys. Lett. 73, 2950, 1998

    被引用文献1件

  • <no title>

    KOGA T.

    Appl. Phys. Lett. 75, 2438, 1999

    被引用文献1件

  • <no title>

    OKAMOTO Y.

    Jpn.J.Appl.Phys. 38, L230, 1999

    被引用文献9件

  • <no title>

    UCHINO H.

    Jpn. J. Appl. Phys. 39, 1675, 2000

    被引用文献5件

  • <no title>

    ERTL M. E.

    Brit. J. Appl. Phys. 14, 161, 1963

    被引用文献1件

  • <no title>

    HASEGAWA Y.

    Proc. 19th Int. Conf. Thermoelectrics, Cardiff, United Kingdom, 2000, 2000

    被引用文献1件

  • <no title>

    OKUMURA H.

    Proc. 17th Int. Conf. Thermoelectrics, Nagoya, Japan, 1998 89, 1998

    被引用文献1件

  • <no title>

    OKUMURA H.

    Proc. 18th Int. Conf. Thermoelectrics, Baltimore, MD, 1999 209, 1999

    被引用文献1件

  • <no title>

    PUTLEY E. H.

    The Hall Effect and Related Phenomena 95, 1960

    被引用文献1件

  • <no title>

    HICKS L. D.

    Phys. Rev. B 47, 12727-12731, 1993

    DOI 被引用文献58件

  • <no title>

    HICKS L. D.

    Phys. Rev. B47, 16631-16634, 1993

    DOI 被引用文献33件

  • <no title>

    KOGA T.

    Phys. Rev. B60, 14286, 1999

    DOI 被引用文献2件

  • <no title>

    GALFFY M.

    Phys. Rev. B 41, 11029, 1990

    DOI 被引用文献1件

各種コード

  • NII論文ID(NAID)
    10012563682
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • ISSN
    0021-4922
  • データ提供元
    CJP書誌  J-STAGE  JSAP 
ページトップへ