SnO_2 Separative Structure Extended Gate H^+-Ion Sensitive Field Effect Transistor by the Sol-Gel Technology and the Readout Circuit Developed by Source Follower

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著者

    • CHOU Jung-Chuan
    • Department of Electronic Engineering, National Yunlin University of Science and Technology
    • KWAN Pik-Kwan
    • Department of Electronic Engineering, National Yunlin University of Science and Technology
    • CHEN Zhi-Jie
    • Department of Electronic Engineering, National Yunlin University of Science and Technology

抄録

In this study, the tin oxide membrane, fabricated by the sol–gel technology, was used as the pH-sensing layer of the extended gate H<SUP>+</SUP>-ion sensitive field effect transistor (EGFET) device. The sensing membrane was deposited on the silicon substrate. The cost of fabricating the EGFET device by the sol–gel technology is lower than by the other methods. The sensitivity of the sol–gel prepared tin oxide separative structure EGFET device is about 57.63 mV/pH in the range of pH1 to pH9. The readout circuit of the tin oxide EGFET was developed by the source follower.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 42(11), 6790-6794, 2003-11-15

    公益社団法人 応用物理学会

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各種コード

  • NII論文ID(NAID)
    10012563710
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    00214922
  • データ提供元
    CJP書誌  J-STAGE 
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