Defect Evolution in Annealed p-type GaAsN Epilayers Grown by Metalorganic Chemical Vapour Deposition

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著者

    • Gao Qiang Gao Qiang
    • Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia
    • Tan Hark Hoe Tan Hark Hoe
    • Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia
    • Deenapanray Prakash N. K.
    • Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia

抄録

We have studied the evolution of electrically active defects in rapid thermally annealed p-type GaAsN epitaxial layers using deep level transient spectroscopy (DLTS). A continuous distribution of hole traps and an overlapping minority carrier trap are observed in the layers grown by metalorganic chemical vapour deposition. Rapid thermal annealing (RTA) in the temperature range 600–900°C for 30 s created six hole traps HA1 ($E_{\text{V}}+0.22$ eV), HA2 ($E_{\text{V}}+0.32$ eV), HA3 ($E_{\text{V}}+0.38$ eV), HA4 ($E_{\text{V}}+0.39$ eV), HA5 ($E_{\text{V}}+0.55$ eV), and HA6 ($E_{\text{V}}+0.78$ eV). Most of these defects are stable at 900°C, although their relative concentrations varied over the RTA temperature in this study. We discuss the origin of these hole traps based on previously reported hole traps in the literature. The increase in doping concentration in the annealed samples is also discussed.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 42(11), 6827-6832, 2003-11-15

    公益社団法人 応用物理学会

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各種コード

  • NII論文ID(NAID)
    10012563829
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    6752309
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  J-STAGE  JSAP 
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