Defect Evolution in Annealed p-type GaAsN Epilayers Grown by Metalorganic Chemical Vapour Deposition
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- Gao Qiang
- Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University
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- Tan Hark Hoe
- Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University
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- Jagadish Chennupati
- Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University
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- Deenapanray Prakash N. K.
- Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University
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We have studied the evolution of electrically active defects in rapid thermally annealed p-type GaAsN epitaxial layers using deep level transient spectroscopy (DLTS). A continuous distribution of hole traps and an overlapping minority carrier trap are observed in the layers grown by metalorganic chemical vapour deposition. Rapid thermal annealing (RTA) in the temperature range 600–900°C for 30 s created six hole traps HA1 (EV+0.22 eV), HA2 (EV+0.32 eV), HA3 (EV+0.38 eV), HA4 (EV+0.39 eV), HA5 (EV+0.55 eV), and HA6 (EV+0.78 eV). Most of these defects are stable at 900°C, although their relative concentrations varied over the RTA temperature in this study. We discuss the origin of these hole traps based on previously reported hole traps in the literature. The increase in doping concentration in the annealed samples is also discussed.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 42 (11), 6827-6832, 2003
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390001206264492160
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- NII論文ID
- 210000054383
- 10012563829
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
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- NDL書誌ID
- 6752309
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 使用不可