Surface and Interface Smoothing of Epitaxial CoSi2 Films by Solid-Phase Epitaxy Using Adsorbed Oxygen Layers and Two-Step Growth on Si(001) Surfaces

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著者

    • Hayashi Yukihiro Hayashi Yukihiro
    • Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
    • Sakai Akira Sakai Akira
    • Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
    • Ikeda Hiroya [他] Ikeda Hiroya
    • Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
    • Zaima Shigeaki
    • Center for Cooperative Research in Advanced Science and Technology, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
    • Yasuda Yukio
    • Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

抄録

The oxygen-mediated two-step growth of high-quality CoSi2(001) films on Si(001) is demonstrated. In the first-step growth, uniform 6-monolayers (ML)-thick CoSi2(001) films with atomically flat surfaces and interfaces are grown by solid-phase epitaxy (SPE) at 470°C of 3 ML Co on O-adsorbed Si and O-covered 3 ML Co on clean Si. In both cases, O atoms improve the surface and interface flatness in SPE growth. In the second-step growth, 5.6 nm Co is solely deposited at 470°C on the O-covered CoSi2 template. We successfully achieve the growth of 20-nm-thick CoSi2(001) films with smooth surfaces and abrupt interfaces. In the O-mediated two-step growth, O atoms segregating to the film growth front suppress the lateral migration of Co atoms. Furthermore, in the second-step growth, the uniform template promotes homogeneous growth and keeps the surfaces and interfaces of CoSi2 films smooth. This novel technique, applicable to salicide processes, is highly suitable for the formation of epitaxial CoSi2 contacts in future ULSI devices.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 42(11), 7039-7044, 2003-11-15

    公益社団法人 応用物理学会

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各種コード

  • NII論文ID(NAID)
    10012564610
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    6752973
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  J-STAGE  JSAP 
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