Improved Emission Efficiency in InGaN / GaN Quantum Wells with Compositionally-Graded Barriers Studied by Time-Resolved Photoluminescence Spectroscopy

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著者

    • Onuma Takeyoshi Onuma Takeyoshi
    • Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
    • Suh Eun-Kyung [他] Suh Eun-Kyung
    • Department of Semiconductor Science and Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
    • Lee Hyung-Jae
    • Department of Semiconductor Science and Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
    • Sota Takayuki
    • Department of Electrical, Electronics, and Computer Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku 169-8555, Japan
    • Chichibu Shigefusa F.
    • Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan

抄録

Recombination dynamics in InGaN / GaN multiple quantum wells (MQWs) having different well / barrier potential profiles were studied. Time-resolved photoluminescence (TRPL) signals of the MQWs having regular potential profiles (rectangular MQW) and those having the compositionally-graded barriers (trapezoidal MQW) exhibited similar stretched exponential decay, which is a fingerprint for localized exciton emissions. The luminescence lifetimes ($\tau_{\text{PL}}$) of them were as long as 4-10 ns between 8 and 300 K, indicating the reduced wavefunction overlap due to the internal polarization fields. According to the analysis based on the model three-level scheme, little difference was found in the nonradiative lifetimes in the free / extended states between the two MQWs. However, the increase of the combined transfer and radiative lifetime with the increase in temperature from 8 to 300 K in the trapezoidal MQW was suppressed by a factor of 1.5 compared to that in the rectangular one, reflecting the recovery of wavefunction overlap and effectively larger localization depth due to the reduced effective field. As a result, the quantum efficiency of the trapezoidal MQW was improved by 40% compared to that of the rectangular one at 300 K.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters

    Japanese journal of applied physics. Pt. 2, Letters 42(11B), L1369-L1371, 2003-11-15

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10012565188
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    ART
  • ISSN
    0021-4922
  • NDL 記事登録ID
    6752320
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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