Study of polishing mechanism in CMP process using an atomic force microscope

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  • SETA Satoko
    Mechanical Systems Laboratory, Corporate Research and Development Center, Toshiba Corporation
  • NISHIOKA Takeshi
    Advanced ULSI Process Engineering Deptartment V, Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation

Bibliographic Information

Other Title
  • 原子間力顕微鏡を用いたシリコン酸化膜研磨メカニズムの研究
  • 研究紹介 原子間力顕微鏡を用いたシリコン酸化膜研磨メカニズムの研究
  • ケンキュウ ショウカイ ゲンシカンリョク ケンビキョウ オ モチイタ シリコン サンカ マク ケンマ メカニズム ノ ケンキュウ

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Abstract

<p>The focus margin of lithography becomes increasingly critical as the LSI design rule decreases. Chemical mechanical polishing (CMP) is an essential process for planarization and is widely applied in ULSI processing. As the slurry characteristics greatly influence the polishing performance, slurry optimization is important in achieving a high degree of planarization. To study the polishing mechanism in detail, the tests simulating the dielectric CMP process have been performed using an atomic force microscope. The phenomena occurring between the slurry and the wafer surface were evaluated.</p>

Journal

  • Oyo Buturi

    Oyo Buturi 73 (3), 368-372, 2004-03-10

    The Japan Society of Applied Physics

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