Microfabrication Technology for Millimeter-Wave Photonic Systems on Si

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A practical method for the full-wafer integration of wafer-bonded uni-traveling carrier photodiodes (UTC-PDs) with gold multilevel interconnections on a Si substrate is described with the focus on the fabrication process. The aim of this work is to show how to produce high-performance Si-based optical-to-electrical conversion modules that will operate in the millimeter-wave region. A damascene process produced multiple levels of thick gold interconnections with a feature size in a range over 10 μm. It involved processing a photosensitive organic polymer as the interlayer dielectric and chemical mechanical polishing that removed the electroplated gold at a high rate. This was achieved by restricting the area to be polished and adding hydrogen peroxide to the conventional KIO<sub>3</sub>-based slurry. The mechanism responsible for this acceleration was analyzed by x-ray photoelectron spectroscopy. The coplanar waveguide produced with this damascene process achieved low-loss transmission of millimeter-waves generated by each wafer-bonded UTC-PD. An electro-optic sampling technique confirmed its excellent low-loss millimeter-wave transmission characteristics.

収録刊行物

  • 電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society

    電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society 124(4), 136-142, 2004-04-01

    The Institute of Electrical Engineers of Japan

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各種コード

  • NII論文ID(NAID)
    10012704025
  • NII書誌ID(NCID)
    AN1052634X
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    13418939
  • NDL 記事登録ID
    6909615
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-B380
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
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