Investigation of Silicon Oxide Thin Films Prepared by Atomic Layer Deposition Using SiH2Cl2 and O3 as the Precursors

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著者

    • Lee Joo-Hyeon Lee Joo-Hyeon
    • Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Korea
    • Kim Un-Jung Kim Un-Jung
    • Department of Advanced Materials Engineering, Sejong University, 98 Gunja-dong, Gwangjin-gu, Seoul 143-747, Korea
    • Rha Sa-Kyun
    • Department of Materials Engineering, Hanbat National University, San 16-1 Deongmyeong-dong, Yuseong-gu, Daejeon 305-719, Korea
    • Lee Won-Jun
    • Department of Advanced Materials Engineering, Sejong University, 98 Gunja-dong, Gwangjin-gu, Seoul 143-747, Korea
    • Park Chong-Ook
    • Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Korea

抄録

Silicon dioxide thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) by alternating SiH2Cl2 and O3(1.5 at%)/O2 exposures at 300°C. O3 was generated by corona discharge inside the delivery line of O2. The oxide film was deposited mainly from O3, not from O2, because we could not observe the deposited film on the substrate without corona discharge under the same process condition. The growth rate of the deposited films increased linearly with increasing amount of simultaneous SiH2Cl2 and O3 exposures, and was saturated at approximately 0.35 nm/cycle with the reactant exposures of more than $3.6\times 10^9$ L. A larger amount of O3/O2 than that of SiH2Cl2 was required to obtain a saturated deposition reaction. When the amount of O3/O2 exposure was varied at a fixed SiH2Cl2 exposure of $1.2\times 10^9$ L, the growth rate of oxide film increased with O3 exposure and was saturated at approximately 0.28 nm/cycle with O3/O2 exposure of more than $2.4\times 10^9$ L. The composition of the deposited film also varied with O3/O2 exposure. The Si/O ratio gradually decreased to 0.5 with increasing amount of O3/O2 exposure. Finally, we also compared the characteristics of the ALD films with those of the films deposited by conventional chemical vapor deposition (CVD) methods. The silicon oxide film prepared by the ALD method at 300°C showed stoichiometry, wet etch rate and average surface roughness comparable to those of the films deposited by low-pressure CVD (LPCVD) and atmospheric-pressure CVD (APCVD) at deposition temperatures ranging from 400 to 800°C

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters

    Japanese journal of applied physics. Pt. 2, Letters 43(3A), L328-L330, 2004-03-01

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10012704818
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    6879060
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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