Improvement of Sintering and Microwave Dielectric Characteristics of Ba(Mg1/3Ta2/3)O3 Ceramics by Addition of BaTi4O9

  • Cheng Ping-Shou
    Department of Electronic Engineering, National Kaohsiung University of Applied Sciences

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  • Improvement of Sintering and Microwave Dielectric Characteristics of Ba(Mg<sub>1/3</sub>Ta<sub>2/3</sub>)O<sub>3</sub>Ceramics by Addition of BaTi<sub>4</sub>O<sub>9</sub>

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Abstract

BaTi4O9 (BT4) calcined at 1150°C and Ba(Mg1⁄3Ta2⁄3)O3 (BMT) calcined at 1200°C are mixed, the sintering and the microwave dielectric characteristics of 0.18 mol BT4 and 0.82 mol BMT ceramics are determined (BT4-BMT). The required sintering temperature of BT4-BMT ceramics is decreased to approximately 1320°C. As the sintering temperatures increase from 1240 to 1360°C, the microwave dielectric properties of BT4-BMT ceramics change as follows: The εr values increase from 23.5 to 28.0, the Q*f values increase from 25200 to 64700 and the τf values linearly change from 2.0 ppm/°C to 4.3 ppm/°C. The εr values, the Q*f values and the τf values are saturated in 1320°C-sintered ceramics.

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