Atomic-Scale Control of Surface Reconstruction on Ge(001) by Scanning Tunneling Microscopy at 80 K
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- Takagi Yasumasa
- Institute for Solid State Physics, University of Tokyo
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- Nakatsuji Kan
- Institute for Solid State Physics, University of Tokyo
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- Yamada Masamichi
- Institute for Solid State Physics, University of Tokyo
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- Komori Fumio
- Institute for Solid State Physics, University of Tokyo
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抄録
The reconstruction of a clean Ge(001) surface is controlled at the atomic scale by the temporal change in the sample bias voltage during scanning tunneling microscopy (STM) observation at 80 K. A positive voltage pulse on the c(4×2)-reconstructed region flips the buckled dimers only in the dimer row right under the STM tip apex, and creates a wire of p(2×2) reconstruction extending along the dimer row. An artificial superstructure is made on the c(4×2) surface by inverting the buckling of the target dimer rows periodically and forming p(2×2) wires side by side. A negative voltage pulse on the p(2×2) region creates a local c(4×2)-reconstructed area near the point of pulse. Its size can be reduced to 1.6nm×2.8nm by manipulating the voltage of the pulse.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 43 (3B), L386-L389, 2004
The Japan Society of Applied Physics
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詳細情報
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- CRID
- 1390282681240709120
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- NII論文ID
- 10012705061
- 130004531784
- 210000057185
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- NII書誌ID
- AA11906093
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 6887386
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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