Atomic-Scale Control of Surface Reconstruction on Ge(001) by Scanning Tunneling Microscopy at 80 K

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The reconstruction of a clean Ge(001) surface is controlled at the atomic scale by the temporal change in the sample bias voltage during scanning tunneling microscopy (STM) observation at 80 K. A positive voltage pulse on the c(4×2)-reconstructed region flips the buckled dimers only in the dimer row right under the STM tip apex, and creates a wire of p(2×2) reconstruction extending along the dimer row. An artificial superstructure is made on the c(4×2) surface by inverting the buckling of the target dimer rows periodically and forming p(2×2) wires side by side. A negative voltage pulse on the p(2×2) region creates a local c(4×2)-reconstructed area near the point of pulse. Its size can be reduced to 1.6nm×2.8nm by manipulating the voltage of the pulse.

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