Atomic-Scale Control of Surface Reconstruction on Ge(001) by Scanning Tunneling Microscopy at 80 K

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The reconstruction of a clean Ge(001) surface is controlled at the atomic scale by the temporal change in the sample bias voltage during scanning tunneling microscopy (STM) observation at 80 K. A positive voltage pulse on the $c(4{\times}2)$-reconstructed region flips the buckled dimers only in the dimer row right under the STM tip apex, and creates a wire of $p(2{\times}2)$ reconstruction extending along the dimer row. An artificial superstructure is made on the $c(4{\times}2)$ surface by inverting the buckling of the target dimer rows periodically and forming $p(2{\times}2)$ wires side by side. A negative voltage pulse on the $p(2{\times}2)$ region creates a local $c(4{\times}2)$-reconstructed area near the point of pulse. Its size can be reduced to $1.6\,\text{nm} \times 2.8\,\text{nm}$ by manipulating the voltage of the pulse.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters

    Japanese journal of applied physics. Pt. 2, Letters 43(3B), L386-L389, 2004-03-15

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10012705061
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    6887386
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  JSAP 
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