Characterization of the Sn Doped In2O3 Film Prepared by DC Magnetron Sputter Type Negative Metal Ion Beam Deposition

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著者

    • Kim Daeil Kim Daeil
    • Process Engineering Laboratory, Samsung Advanced Institute of Technology, Mt. 14-1, Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do 449-712, Korea
    • Ma Dongjoon Ma Dongjoon
    • Process Engineering Laboratory, Samsung Advanced Institute of Technology, Mt. 14-1, Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do 449-712, Korea
    • Lee Naesung Lee Naesung
    • Department of Nano Science and Technology, Sejong University, 98 Gunja-Dong, Gwangjin-Gu, Seoul 143-747, Korea

抄録

Transparent conducting indium tin oxide (ITO) films were prepared on a glass substrate by DC magnetron sputter type negative ion source from a target of a mixture of In2O3 (90%) and SnO2 (10%). In order to investigate the influence of cesium (Cs) partial pressure ($P_{\text{Cs}}$) on the optoelectronic property of ITO films, the $P_{\text{Cs}}$ was varied from $1\times 10^{-3}$ to $2.2\times 10^{-3}$ Pa. The O2/Ar flow rate, working pressure, power density, and substrate temperature were kept constant at 3.6%, $9\times 10^{-2}$ Pa, 2.5 Wcm-2 and 70°C, respectively. By optimizing the $P_{\text{Cs}}$ at $1.7\times 10^{-3}$ Pa, transparent (transmission ${\sim}81$% at 550 nm) and conducting (resistivity $\sim 4.3\times 10^{-4}$ $\Omega$cm) ITO films were prepared. Atomic force microscopy (AFM) images showed that the surface morphology also varied significantly with $P_{\text{Cs}}$ and that the lowest surface rms roughness was 0.6 nm measured at $P_{\text{Cs}}=1.7\times 10^{-3}$ Pa. XPS measurement showed that the Cs concentration in the ITO films was less than 0.2 at%.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 43(4A), 1536-1540, 2004-04-15

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10012860165
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    6931734
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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