書誌事項
- タイトル別名
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- Preparations of ITO Thin Films by Low Temperature and Low Damage Process
- テイオン テイダメージプロセス ニ ヨル インジウム スズ サンカブツ ITO ハクマク ノ サクセイ
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抄録
We deposited indium-tin oxide (ITO) thin films as transparent conductive electrode on no heating substrate by the facing targets sputtering system. The substrate temperature during the deposition was lower than 40°C. The ITO film showed resistivity of 5.2 × 10-4 Ω·cm and light transmittance over 90% at 550 nm, which was obtained by changing deposition pressure and O2 gas flow rate during the deposition. Surface morphology and the crystal structure were analyzed by AFM and XRD, respectively. Surface average roughness Ra and surface maximum roughness Rmax were 0.46 nm and 7.4 nm, respectively. The XRD analysis revealed entirely amorphous structure. <BR>We also obtained the ITO films with resistivity of 4.1 × 10-4 Ω·cm by stable low voltage sputtering with DC + RF discharge.
収録刊行物
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- 真空
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真空 47 (3), 187-190, 2004
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390282679039929600
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- NII論文ID
- 10012867122
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- NII書誌ID
- AN00119871
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- ISSN
- 18809413
- 05598516
- http://id.crossref.org/issn/05598516
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- NDL書誌ID
- 6930002
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可