Electron holographic mapping of two-dimensional doping areas in cross-sectional device specimens prepared by the lift-out technique based on a focused ion beam

• WANG Zhou-Guang

  Japan Fine Ceramics Center

• KATO Naoko

  Structural Analysis, International Test and Engineering Services Co. Ltd

• SASAKI Katsuhiro

  Department of Quantum Engineering, Nagoya University

• HIRAYAMA Tsukasa

  Japan Fine Ceramics Center

• SAKA Hiroyasu

  Department of Quantum Engineering, Nagoya University

収録刊行物

• Journal of electron microscopy

  Journal of electron microscopy 53 (2), 115-119, 2004-04-01

キーワード

• electron holography
• CMOS device
• 2D doping area
• focused ion beam
• lift-out

詳細情報

• CRID: 1574231874842002432
• NII論文ID: 10012932510
• NII書誌ID: AA00697060
• ISSN: 00220744
• 本文言語コード: en
• データソース種別:
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