次世代超電導線材の開発と特性評価 IBAD‐PLD法長尺YBCO線材の開発―IBAD中間層上における自己配向PLD‐CeO2キャップ層の長尺化―
書誌事項
- タイトル別名
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- Development of Long YBCO-coated Conductors Using IBAD-PLD Method-Long Fabrication of Self-epitaxial PLD-CeO2 Cap Layers on IBAD Tape-
- IBAD-PLD法長尺YBCO線材の開発--IBAD中間層上における自己配向PLD-CeO2キャップ層の長尺化
- IBAD PLDホウ チョウシャク YBCO センザイ ノ カイハツ IBAD チュウカンソウ ジョウ ニ オケル ジコハイコウ PLD CeO2 キャップソウ ノ チョウシャクカ
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We found that a PLD-CeO2 cap layer on an IBAD-Gd2Zr2O7 (GZO) tape can make a high grain alignment without ion-beam assistance such as the IBAD process. We call this phenomenon “self-epitaxy in a PLD-CeO2 cap layer”. At present, we are developing long tapes by the Reel-to-Reel process for the self-epitaxial PLD-CeO2 cap layer on an IBAD-GZO tape. A 108 m-long tape with a PLD-CeO2 cap layer was obtained. The delta phi values of the buffer layer were improved to 4.3-4.8 degrees of PLD-CeO2 from 13.3-14.0 degrees of IBAD-GZO. Although the fabrication rate of the PLD-CeO2 cap layer was as fast as 5-6 m/h, that of the IBAD-GZO was 1 m/h. Then, we tried to improve the overall fabrication rate of the total buffer layers using a thin IBAD layer and the self-epitaxial PLD-CeO2 cap layer. A PLD-CeO2 cap layer was deposited at a tape transfer speed of 2.5 m/h on a 55 m-long IBAD-GZO tape with the delta phi values of 23.1-24.0 degrees fabricated at 2 m/h, which was two times faster than the conventional IBAD process. As a result, the delta phi values of the PLD-CeO2 cap layer were in the range of 8.6-10.4 degrees. The fabrication rate throughout all of the processes for buffer layers was achieved to be 2 m/h. It was found that PLD-CeO2 was effective for enhancing both the fabrication rate and grain alignment.
収録刊行物
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- 低温工学
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低温工学 39 (11), 529-535, 2004
公益社団法人 低温工学・超電導学会 (旧 社団法人 低温工学協会)
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詳細情報 詳細情報について
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- CRID
- 1390001204615357056
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- NII論文ID
- 10013555359
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- NII書誌ID
- AN00333419
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- COI
- 1:CAS:528:DC%2BD2MXitFyqsw%3D%3D
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- ISSN
- 18800408
- 03892441
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- NDL書誌ID
- 7167041
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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