New Inductively Coupled Plasma System Using Divided Antenna for Photoresist Ashing

• Terai Fujio

  Postgraduate Course of Functional Control System, Shibaura Institute of Technology Corporate Manufacturing Engineering Center, Toshiba Corporation

• Kobayashi Hiroaki

  Corporate Manufacturing Engineering Center, Toshiba Corporation

• Iyanagi Katsumi

  Corporate Manufacturing Engineering Center, Toshiba Corporation

• Yamage Masashi

  Corporate Manufacturing Engineering Center, Toshiba Corporation

• Nagatomo Takao

  Postgraduate Course of Functional Control System, Shibaura Institute of Technology

• Homma Tetsuya

  Postgraduate Course of Functional Control System, Shibaura Institute of Technology

抄録

We have developed an inductively coupled plasma (ICP) system with a small chamber for 300-mm-diameter-wafer processes, and a good uniformity of ashing, and both low substrate temperature and low pressure were achieved. The features of this ICP system are substrate temperatures lower than 60°C in order to suppress chemical reactions, and low pressures of 3–5 Pa to suppress the both oxidation of Cu wiring and the degradation of low-k films. Furthermore, the antenna is divided plurally and capacitively coupled. This new antenna can achieve good uniformity in a small chamber because the capacitive coupling to the chamber through a quartz glass window can be easily controlled by reducing series impedance, even when the radio frequency (rf) power is very high. Moreover, the damage to the quartz glass window can be decreased by controlling the series impedance of the antenna, resulting in a long-lasting quartz window. The chamber structure was also optimized by performing an original plasma simulation to improve the uniformity of ashing rate. As results for 300-mm-diameter wafers in the 460-mm-diameter chamber, an average ashing rate of 848 nm/min with a uniformity of ±5.5% was obtained for photoresist films under the following conditions: an O₂ gas flow rate of 200 sccm, a substrate temperature of 60°C, a gas pressure of 3 Pa and an rf power of 4 kW.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 43 (9A), 6392-6398, 2004

  The Japan Society of Applied Physics

キーワード

• photoresist
• ashing
• plasma
• ICP
• antenna
• uniformity
• ashing rate

詳細情報

• CRID: 1390001206265929472
• NII論文ID: 10013574620
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.43.6392
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 7080132
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7080132
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.43.6392
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.43.6392/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可