Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280 nm

• Sun Wenhong

  Department of Electrical Engineering, University of South Carolina

• Adivarahan Vinod

  Department of Electrical Engineering, University of South Carolina

• Shatalov Maxim

  Department of Electrical Engineering, University of South Carolina

• Lee Youngbae

  Department of Electrical Engineering, University of South Carolina

• Wu Shuai

  Department of Electrical Engineering, University of South Carolina

• Yang Jinwei

  Department of Electrical Engineering, University of South Carolina

• Zhang Jianping

  Department of Electrical Engineering, University of South Carolina Sensor Electronic Technology, Inc., 1195 Atlas Rd

• Khan M. Asif

  Department of Electrical Engineering, University of South Carolina

抄録

We report on deep ultraviolet light emitting diodes using AlGaN multiple quantum well active regions and with peak emission at 280 nm. A new buffer layer and active region design resulted in flip-chip devices with continuous wave powers as high as 0.85 mW for a pump current of 20 mA and a record external quantum efficiency over 1%. The power saturated at 5 mW for a dc pump current of 200 mA.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 43 (11A), L1419-L1421, 2004

  The Japan Society of Applied Physics

キーワード

• AlGaN
• quantum well
• ultraviolet
• light emitting diode

詳細情報

• CRID: 1390001206266223104
• NII論文ID: 210000057036
• NII論文ID: 10013787327
• NII書誌ID: AA11906093
• DOI: 10.1143/jjap.43.l1419
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• NDL書誌ID: 7146732
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7146732
• Web Site: http://stacks.iop.org/1347-4065/43/i=11A/a=L1419/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可