Improvement in Oxidation Resistance of Cu-Al Dilute Alloys by Pre-annealing in H2 and Ar Atmospheres
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- Hong Sang-Hwui
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
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- Mimura Kouji
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
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- Zhu Yongfu
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
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- Isshiki Minoru
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
書誌事項
- タイトル別名
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- Improvement in Oxidation Resistance of Cu-Al Dilute Alloys by Pre-annealing in H<SUB>2</SUB> and Ar Atmospheres
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The formation of protective Al2O3 thin layers on Cu-Al dilute alloys and their effect on the oxidation resistance has been investigated at high temperatures. Since selective and preferential oxidation of Al in Cu-Al alloys would take place under the very low oxygen pressures, Cu-Al (Al: 0.2∼2 mass%) alloys were annealed at various temperatures in H2 and/or Ar atmosphere. Continuous stable Al2O3 thin layers were formed on the specimens annealed in Ar after H2 annealing. Owing to the protective thin Al2O3 layers, the high temperature oxidation rates decreased to about 1/20 to 1/40 times lower than that of pure Cu.
収録刊行物
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- MATERIALS TRANSACTIONS
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MATERIALS TRANSACTIONS 46 (2), 167-170, 2005
公益社団法人 日本金属学会
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詳細情報 詳細情報について
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- CRID
- 1390282679225686528
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- NII論文ID
- 10014416999
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- NII書誌ID
- AA1151294X
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- COI
- 1:CAS:528:DC%2BD2MXjtFWltL4%3D
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- ISSN
- 13475320
- 13459678
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- NDL書誌ID
- 7256673
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 抄録ライセンスフラグ
- 使用不可