High-Critical-Current-Density Epitaxial Films of SmBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-x</sub> in High Fields

  • Yoshida Yutaka
    Department of Energy and Science, Nagoya University CREST, Japan Science and Technology Agency
  • Matsumoto Kaname
    Department of Materials Science and Engineering, Kyoto University CREST, Japan Science and Technology Agency
  • Ichino Yusuke
    Department of Energy and Science, Nagoya University CREST, Japan Science and Technology Agency
  • Itoh Masakazu
    Department of Energy and Science, Nagoya University CREST, Japan Science and Technology Agency
  • Ichinose Ataru
    Electrical Physics Department, Komae Research Laboratory, Central Research Institute of Electric Power Industry CREST, Japan Science and Technology Agency
  • Horii Shigeru
    Department of Superconductivity, University of Tokyo CREST, Japan Science and Technology Agency
  • Mukaida Masashi
    Department of Electrical and Information Engineering, Yamagata University CREST, Japan Science and Technology Agency
  • Takai Yoshiaki
    Department of Energy and Science, Nagoya University

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  • High-Critical-Current-Density Epitaxial Films of SmBa2Cu3O7-x in High Fields
  • high-critical-current-density epitaxial films of in high fields

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The critical current density (Jc) and irreversibility field (Birr) of epitaxial SmBa2Cu3O7−x (SmBCO) films are reported. The Birr and Jc of these films deposited on MgO(100) substrates by pulsed-laser deposition depend critically on the substrate temperature. The use of a thin SmBCO seed layer grown at a high substrate temperature enabled us to obtain fully c-axis-oriented SmBCO films at relatively low temperatures, resulting in a high Jc of 1.7×105 A/cm2 of B||c at 5 T and 77 K. This value is as high as that of the optimized NbTi superconducting wires achieved at 5 T and 4.2 K.

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