Coulomb and Phonon Scattering Processes in Metal-Oxide-Semiconductor Inversion Layers: Beyond Matthiessen's Rule

• Ishihara Takamitsu

  Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation

• Sano Nobuyuki

  Institute of Applied Physics, The University of Tsukuba

抄録

The separability of Coulomb and phonon scattering processes in inversion layers of metal–oxide–semiconductor field-effect-transistors (MOSFETs) was studied. The effect of finite collisional duration due to phonon scattering was considered in the evaluation of Coulomb scattering-limited mobility to investigate the relationship between the separability of Coulomb and phonon scattering processes and the long-range nature of Coulomb potential. It was found that the condition under which Coulomb scattering is separated from phonon scattering is determined by the relationship between the screening length due to free carriers in the inversion layers and the phonon mean free path. It was also found that the long-range component of the Coulomb potential is effectively cut off by phonon scattering.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 44 (4A), 1682-1686, 2005

  The Japan Society of Applied Physics

キーワード

• Matthiesen’s rule
• Coulomb scattering
• phonon scattering
• finite collisional duration

詳細情報

• CRID: 1390001206265807104
• NII論文ID: 10015469982
• NII論文ID: 130004533644
• NII論文ID: 210000057564
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.44.1682
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 7302388
• Web Site: http://id.ndl.go.jp/bib/7302388
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7302388
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.44.1682
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.44.1682/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可