Reduction in Operating Current of High-Power 660-nm Laser Diodes Using a Transparent AlGaAs Cap Layer
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- HIROYAMA Ryoji
- Microelectronics Research Center, SANYO Electric Co., Ltd.
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- INOUE Daijiro
- Microelectronics Research Center, SANYO Electric Co., Ltd.
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- NOMURA Yasuhiko
- Microelectronics Research Center, SANYO Electric Co., Ltd.
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- UEDA Yasuhiro
- Microelectronics Research Center, SANYO Electric Co., Ltd.
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- SHONO Masayuki
- Microelectronics Research Center, SANYO Electric Co., Ltd.
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- SAWADA Minoru
- Microelectronics Research Center, SANYO Electric Co., Ltd.
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収録刊行物
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- Extended abstracts of the ... Conference on Solid State Devices and Materials
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Extended abstracts of the ... Conference on Solid State Devices and Materials 2001 608-609, 2001-09-25
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詳細情報 詳細情報について
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- CRID
- 1570572700209379712
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- NII論文ID
- 10015753850
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- NII書誌ID
- AA10777858
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- 本文言語コード
- en
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- データソース種別
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