Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen

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  • Kamiura Yoichi
    Division of Industrial Innovation Sciences, The Graduate School of Natural Science and Technology, Okayama University
  • Kaneshiro Masahiro
    Division of Industrial Innovation Sciences, The Graduate School of Natural Science and Technology, Okayama University
  • Tamura Jin
    Division of Industrial Innovation Sciences, The Graduate School of Natural Science and Technology, Okayama University
  • Ishiyama Takeshi
    Division of Industrial Innovation Sciences, The Graduate School of Natural Science and Technology, Okayama University
  • Yamashita Yoshifumi
    Division of Industrial Innovation Sciences, The Graduate School of Natural Science and Technology, Okayama University
  • Mitani Tomotsugu
    Nitride Semiconductor Research Laboratory, Nichia Corporation
  • Mukai Takashi
    Nitride Semiconductor Research Laboratory, Nichia Corporation

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We have found for the first time that blue emission from Mg-doped GaN was greatly enhanced by remote plasma treatment (RPT) with plasma containing atomic hydrogen, in particular, water vapor plasma, at low temperatures of 300–400°C. The highest enhancing factor was twenty, achieved by water vapor RPT at 400°C for 30 min. The enhanced blue emission was stable up to 500°C, similarly to blue emission from as-grown samples, suggesting the same origin and mechanism. We have confirmed that the emission mechanism is donor–acceptor pair (DAP) recombination, and have concluded that RPT produces a hydrogen-related donor level at Ec−0.37 eV involved in the DAP emission.

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