RF Diamond Transistors: Current Status and Future Prospects

• Umezawa Hitoshi

  School of Science and Engineering, Waseda University Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST)

• Hirama Kazuyuki

  School of Science and Engineering, Waseda University

• Arai Tatsuya

  School of Science and Engineering, Waseda University

• Hata Hideo

  School of Science and Engineering, Waseda University

• Takayanagi Hidenori

  School of Science and Engineering, Waseda University

• Koshiba Toru

  School of Science and Engineering, Waseda University

• Yohara Keiichiro

  School of Science and Engineering, Waseda University

• Mejima Soichi

  School of Science and Engineering, Waseda University

• Satoh Mitsuya

  School of Science and Engineering, Waseda University

• Song Kwang-Soup

  School of Science and Engineering, Waseda University

• Kawarada Hiroshi

  School of Science and Engineering, Waseda University

抄録

RF diamond transistors have been developed on a hydrogen-terminated surface conductive layer. f_T and f_max of 23 and 25 GHz, respectively, have been achieved in a diamond MISFET with a 0.2 μm gate length. Utilizing de-embedding and small-signal equivalent circuit analysis, parasitic components are extracted. The intrinsic f_T and f_max of the 0.2-μm-gate diamond MISFET are estimated to be 26 and 36 GHz, respectively. In this report, some of the challenging steps in device fabrication processes such as the development of a low-resistivity ohmic layer, a high-quality gate insulator and acceptor density control technology, toward high-power and high-frequency diamond transistors with high reliability, are introduced.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 44 (11), 7789-7794, 2005

  The Japan Society of Applied Physics

キーワード

• diamond
• hydrogen-terminated surface conductive layer
• field-effect transistors
• cut-off frequency
• maximum frequency of oscillation
• parasitic components

詳細情報

• CRID: 1390001206269307648
• NII論文ID: 10016870458
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.44.7789
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 7701440
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7701440
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.44.7789
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.44.7789/pdf
• 本文言語コード: en
• データソース種別:
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