Hydrogen Ion Drift into Underlying Oxides by RF Bias during High-Density Plasma Chemical Vapor Deposition

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  • Yamaguchi Tadashi
    Process Development Department, Process Technology Development Division, Production and Technology Unit, Renesas Technology Corp.
  • Sawada Mahito
    Process Development Department, Process Technology Development Division, Production and Technology Unit, Renesas Technology Corp.
  • Asai Koyu
    Process Development Department, Process Technology Development Division, Production and Technology Unit, Renesas Technology Corp.
  • Kobayashi Kiyoteru
    Process Development Department, Process Technology Development Division, Production and Technology Unit, Renesas Technology Corp.
  • Yoneda Masahiro
    Process Development Department, Process Technology Development Division, Production and Technology Unit, Renesas Technology Corp.

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High-density plasma chemical vapor deposition (HDP-CVD) is a deposition method of current interest for the gap-filling process of the intermetal dielectric (IMD) in semiconductor circuits. We first demonstrated that hydrogen ions drift into underlying thermal oxides during HDP-CVD with a SiH4–O2–Ar system, and that they degrade the reliability of gate oxides. The characteristics of the oxides were investigated using secondary ion mass spectroscopy (SIMS), thermal desorption spectroscopy (TDS), and capacitance–voltage (C–V) measurements of metal–oxide–semiconductor (MOS) capacitors. The hydrogen ions that are dissociated from SiH4 in plasma penetrate into the HDP-CVD oxides, and some of the hydrogen ions in the HDP-CVD oxides drift into the underlying thermal oxides by rf bias. The drifting hydrogen creates two chemical bonding states and generates hole trap sites in the underlying thermal oxides.

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