The Analysis of Defective Cell Induced by COP in 0.3 microns Technology Node DRAM

• MURANAKA Masaya

  ULSI Development Dept., Hitachi ULSI Engineering Corp.

• MIURA Masashi

  ULSI Development Dept., Hitachi ULSI Engineering Corp.

• IWAI Hidetoshi

  Device Development Center Hitachi Ltd.

• KAWAMURA Masao

  Device Development Center Hitachi Ltd.

• TADAKI Yoshitaka

  Device Development Center Hitachi Ltd.

• KAERIYAMA Toshiyuki

  Manufacturing Capability Development, Semiconductor Group, Texas Instruments Inc.

収録刊行物

• Extended abstracts of the ... Conference on Solid State Devices and Materials

  Extended abstracts of the ... Conference on Solid State Devices and Materials 1997 396-397, 1997-09-16

詳細情報

• CRID: 1572824500073088128
• NII論文ID: 10017195125
• NII書誌ID: AA10777858
• 本文言語コード: en
• データソース種別:
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