C-V Characteristics of ZnO Thin-Film Field Effect Transistor Structures Formed on Glass Substrates

  • OHMAKI Y.
    Laboratory for Electronic Intelligent Systems, Research Institute of Electric Communication Tohoku University
  • KISHIMOTO S.
    Laboratory for Electronic Intelligent Systems, Research Institute of Electric Communication Tohoku University
  • OHNO Y.
    Laboratory for Electronic Intelligent Systems, Research Institute of Electric Communication Tohoku University
  • MATSUKURA F.
    Laboratory for Electronic Intelligent Systems, Research Institute of Electric Communication Tohoku University
  • OHNO H.
    Laboratory for Electronic Intelligent Systems, Research Institute of Electric Communication Tohoku University
  • SAIKUSA K.
    Department of Innovative and Engineered Materials, Tokyo Institute of Technology
  • AITA T.
    Department of Innovative and Engineered Materials, Tokyo Institute of Technology
  • OHTOMO A.
    Department of Innovative and Engineered Materials, Tokyo Institute of Technology
  • KAWASAKI M.
    Department of Innovative and Engineered Materials, Tokyo Institute of Technology

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詳細情報 詳細情報について

  • CRID
    1570009750306505088
  • NII論文ID
    10017197647
  • NII書誌ID
    AA10777858
  • 本文言語コード
    en
  • データソース種別
    • CiNii Articles

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