Ultra-Low Standby Current in SOI-CMOS LSI Circuits by Using Body-Bias-Control Technology

• HIGASHI K.

  IC Development Group, SHARP Corp.

• OHMI T.

  Department of Electronic Eng., Graduate School of Eng., Tohoku University

• ADAN A. O.

  IC Development Group, SHARP Corp.

• MORIMOTO H.

  IC Development Group, SHARP Corp.

• NIIMI K.

  IC Development Group, SHARP Corp.

• ASHIDA T.

  IC Development Group, SHARP Corp.

• SUGAWA S.

  Department of Electronic Eng., Graduate School of Eng., Tohoku University

収録刊行物

• Extended abstracts of the ... Conference on Solid State Devices and Materials

  Extended abstracts of the ... Conference on Solid State Devices and Materials 2000 376-377, 2000-08-28

詳細情報

• CRID: 1573668925003850112
• NII論文ID: 10017198317
• NII書誌ID: AA10777858
• 本文言語コード: en
• データソース種別:
  • CiNii Articles