Exciton Binding Energy under Electric Field in ZnTe1-xSx/ZnS Strained-Layer Superlattices

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著者

    • Onodera Chikara Onodera Chikara
    • Electronic Engineering Course, Aomori Prefectural Hachinohe Technical Senior High School, 1-2-27 Koyo, Hachinohe, Aomori 031-0801, Japan
    • Taguchi Tsunemasa
    • Department of Electrical and Electronic Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan

抄録

Conduction and valence band offsets in ZnTe1-xSx/ZnS strained-layer superlattices (SLSs) are calculated as a function of sulfur (S) concentration ($x$). The valence band offsets markedly decreases with increasing $x$ because the energy difference between the band gaps ZnS and ZnTe1-xSx decreases with increasing $x$. Exciton binding energy in the ZnTe1-xSx/ZnS SLSs decreases with increasing ZnTe1-xSx and ZnS layer thickness. This system has two exciton systems under an applied electric field. The energy splitting of the exciton systems increases with increasing electric field strength.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(7), 5832-5835, 2006-07-15

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018000023
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7978919
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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