High-resolution transmission electron microscopy and electron energy-loss spectroscopy study of polycrystalline-Si/ZrO_2/SiO_2/Si metal-oxide-semiconductor structures

• YANG Jun-Mo

  National Nanofab Center

• KIM Joong Jung

  Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

• KIM Kyung-Seob

  Department of Electronic Engineering, Yeojoo Institute of Technology

• LEE Wan-Gyu

  National Nanofab Center

• KAWASAKI Masahiro

  JEOL Ltd

収録刊行物

• Journal of electron microscopy

  Journal of electron microscopy 55 (1), 1-5, 2006-01-01

キーワード

• Si semiconductor
• ZrO_2
• high-resolution transmission electron microscopy
• electron energy-loss spectroscopy
• annular-dark field scanning transmission electron microscopy

詳細情報

• CRID: 1574231875082900736
• NII論文ID: 10018006114
• NII書誌ID: AA00697060
• ISSN: 00220744
• 本文言語コード: en
• データソース種別:
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