Study on the Mechanism of Sn Whisker Growth : Part II Estimation of Excessive Energy & Its Origin

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In microstructures such as whiskers, their surface free energy is supposed to determine the criterion on whether the whisker growth can take place ; then a critical dimension for the whisker growth should exist, depending on the degree of the excessive energy that drives the whisker growth. In this respect, the excessive energy included in matt Sn deposits plated on Cu substrates has been estimated to be approximately 1×10<sup>−</sup> <sup>22</sup> J atom<sup>−</sup><sup>1</sup> in terms of chemical potential.<br> Furthermore the contribution of grain-boundary free energy and strain energy to the excessive energy has been estimated. It has been shown that the grain-boundary free energy seems not to contribute to the excessive energy. On the other hand, it has been found that the strain energy sufficient for the whisker growth requires far more stress (ca. +400 or −400 MPa) than we usually observe (ca. −10 MPa). From these, it has been suggested that such a high stress can be attributed to the extremely large distortion of crystal lattice in an atomic level instead of macro-strains. The source of the distortion is supposed to be produced by the excessive Sn atoms generated by imbalanced diffusion between Sn and Cu.<br>

収録刊行物

  • 表面技術 = The Journal of the Surface Finishing Society of Japan

    表面技術 = The Journal of the Surface Finishing Society of Japan 57(7), 529-536, 2006-07-01

    一般社団法人 表面技術協会

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各種コード

  • NII論文ID(NAID)
    10018008582
  • NII書誌ID(NCID)
    AN1005202X
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    09151869
  • NDL 記事登録ID
    8038864
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-291
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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