泳動電着法によるPb-Zr-Ti-Nb-Si-O系強誘電体厚膜の作製 [in Japanese] Preparation of Pb-Zr-Ti-Nb-Si-O Ferroelectric Thick Film by Electrophoretic Deposition [in Japanese]
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We investigated the preparation and characterization of the Pb–Zr–Ti–Nb–Si–O ferroelectric thick film by the electrophoretic deposition method. A ferroelectric material of (Pb,Si)(Zr<sub>1−x−y</sub>Ti<sub>x</sub>Nb<sub>y</sub>) O<sub>z</sub> was prepared by the solid state method. The obtained samples were single phase, and the metal composition was controlled. The powder was charged into the acetone-iodine based electrodepositon bath after it was ultrasonically suspended. The maximum amount of the deposit was obtained when 1.5 g/l I<sub>2</sub> and 5.0 g/l ferroelectric powders were added to a 100 ml acetone bath, and a uniform coating was obtained with an applied voltage at 180 V. The thickness of the film was controlled by changing the deposition time. The heat treatment condition of the deposited thick film was investigated and the conditions were 1000°C, O<sub>2</sub>, and 120 sec. The obtained thick film was relatively dense and uniform with a thickness of 15–30 µm at center position. Furthermore, the microstructure of the thick film was homogeneous. Based on these results, we obtained relatively good P-E hysterisis loops using Nb substituted Pb–Zr–Ti–Nb–Si–O thick films.
Electrochemistry 74(11), 883-889, 2006-11-05
The Electrochemical Society of Japan