不規則構造を有するCo_2(Cr_<1-x>Fe_x)Alフルホイスラー合金を用いた強磁性トンネル接合の磁気抵抗効果 [in Japanese] Tunnel Magnetoresistance for Magnetic Tunnel Junctions with a Disordered Co_2(Cr_<1-x>Fe_x)Al Full-Heusler Alloy Electrode [in Japanese]
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We have investigated the dependence of the crystal structure of the electrode on tunnel magnetoresistance (TMR) in magnetic tunnel junctions (MTJs) using a Co<sub>2</sub>(Cr<sub>1-<i>x</i></sub>Fe<sub><i>x</i></sub>)Al (<i>x</i> = 0.4, 1) electrode. The TMR for <i>x</i> = 1 and 0.4 are respective larger and smaller for the <i>A</i>2 structure than the <i>B</i>2 structure, which is consistent with the calculated spin polarizations. The maximum TMR of 48% is obtained at room temperature (RT) for the MTJ with the <i>A</i>2 type Co<sub>2</sub>FeAl electrode. However, the TMR for the <i>B</i>2 type Co<sub>2</sub>(Cr<sub>0.6</sub>Fe<sub>0.4</sub>)Al-based MTJ is much smaller than the value expected from the spin polarization. This reduction of the TMR for x = 0.4 might be due to the Co-Cr type atomic site disordering involving in the <i>B</i>2 structure.
- IEEJ Transactions on Fundamentals and Materials
IEEJ Transactions on Fundamentals and Materials 126(5), 276-280, 2006-05-01
The Institute of Electrical Engineers of Japan