パルスレーザ蒸着法で作製したn型Sm_<2-x>Ce_xCuO_4酸化物薄膜の熱電特性 [in Japanese] Thermoelectric Properties of n-type Sm_<2-x>Ce_xCuO_4 Thin Films Prepared by Pulsed Laser Deposition [in Japanese]
Access this Article
Search this Article
Sm<sub>2-<i>x</i></sub>Ce<sub><i>x</i></sub>CuO<sub>4</sub> (SCCO) thin films (<i>x</i> = 0 - 0.10) were deposited on MgO (100) and SrTiO<sub>3</sub> (100) substrates by pulsed laser deposition method. From the x-ray diffraction (XRD) patterns, the SCCO thin films on the SrTiO<sub>3</sub>(STO)<sub> </sub>substrate were confirmed that <i>c</i>-axis was parallel to the substrate normal and in-plane alignment was cube-on-cube for the substrate. The Seebeck coefficient and the resistivity decreased with the increasing an amount of Ce<sup>4+</sup> substitution. We calculated the power factor from these values and found that the highest value of 1.14 mW/mK<sup>2</sup> at 323 K was achieved by the SCCO thin film with <i>x</i> = 0.02. So, as a result of repeated measurements of the thermoelectric properties in the high temperature more than 700 K, the high stability of the SCCO thin films was confirmed.
- IEEJ Transactions on Fundamentals and Materials
IEEJ Transactions on Fundamentals and Materials 126(5), 369-373, 2006-05-01
The Institute of Electrical Engineers of Japan