MEMS Variable Capacitor Using Cross Membranes for RF Band

• Shimanouchi Takeaki

  Fujitsu Ltd.

• Imai Masahiko

  Fujitsu Ltd.

• Nakatani Tadashi

  Fujitsu Ltd.

• Nguyen Anh Tuan

  Fujitsu Laboratories Ltd.

• Ueda Satoshi

  Fujitsu Ltd.

• Sawaki Ippei

  Fujitsu Laboratories Ltd.

• Satoh Yoshio

  Fujitsu Ltd.

抄録

This paper describes a novel design of MEMS variable capacitor with high quality factor and wide tuning range. The proposed MEMS variable capacitor is composed of two cross movable electrodes and one dielectric layer between them. The fabrication process does not require any complex processes, such as wafer transfer, wafer backside etching, special planarization or supercritical point drying. The capacitor has tuning range of 330% at 5 V bias voltage, and an overall quality factor of 52 at 2 pF and 2.4 GHz.

収録刊行物

• 電気学会論文誌Ｅ（センサ・マイクロマシン部門誌）

  電気学会論文誌Ｅ（センサ・マイクロマシン部門誌） 126 (5), 180-184, 2006

  一般社団法人 電気学会

キーワード

• variable capacitor
• quality factor
• RF

詳細情報

• CRID: 1390282679438277888
• NII論文ID: 10018111781
• NII書誌ID: AN1052634X
• DOI: 10.1541/ieejsmas.126.180
• ISSN: 13475525
• ISSN: 13418939
• NDL書誌ID: 7946598
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7946598
• Web Site: http://www.jstage.jst.go.jp/article/ieejsmas/126/5/126_5_180/_pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可