走査型プローブ顕微鏡によるシリコン酸化膜の経時絶縁破壊測定 Time Dependent Dielectric Breakdown Measurement of Silicon Oxide using Scanning Probe Microscopy

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抄録

The applicability of scanning probe microscopy (SPM) in the time dependent dielectric breakdown (TDDB) characteristics of silicon oxide has been demonstrated. Our study demonstrates that cumulative failure rates by the Weibull plot of TDDB measurement for a 9.5 nm-thick oxide were found to be straight lines and shape parameters were not based on bias voltages, but were almost fixed. These results indicate that failure mode within the limits of these voltage conditions has not changed and the SPM method is applicable to the evaluation of TDDB characteristics of silicon oxides. We also applied this method to oxides on a silicon substrate surface with and without damage by plasma etching. The life expectancy in a real working voltage domain was searched for, and it presumed that a difference arose in these.

収録刊行物

  • 表面科学 = Journal of The Surface Science Society of Japan

    表面科学 = Journal of The Surface Science Society of Japan 27(4), 245-248, 2006-04-10

    The Surface Science Society of Japan

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各種コード

  • NII論文ID(NAID)
    10018133441
  • NII書誌ID(NCID)
    AN00334149
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    03885321
  • NDL 記事登録ID
    7930601
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z15-379
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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