走査型プローブ顕微鏡によるシリコン酸化膜の経時絶縁破壊測定

• 安江 孝夫

  三菱電機株式会社中津川製作所

• 河合 晃

  長岡技術科学大学

書誌事項

タイトル別名

• Time Dependent Dielectric Breakdown Measurement of Silicon Oxide using Scanning Probe Microscopy
• ソウサガタ プローブ ケンビキョウ ニ ヨル シリコン サンカ マク ノ ケイジ ゼツエン ハカイ ソクテイ

抄録

The applicability of scanning probe microscopy (SPM) in the time dependent dielectric breakdown (TDDB) characteristics of silicon oxide has been demonstrated. Our study demonstrates that cumulative failure rates by the Weibull plot of TDDB measurement for a 9.5 nm-thick oxide were found to be straight lines and shape parameters were not based on bias voltages, but were almost fixed. These results indicate that failure mode within the limits of these voltage conditions has not changed and the SPM method is applicable to the evaluation of TDDB characteristics of silicon oxides. We also applied this method to oxides on a silicon substrate surface with and without damage by plasma etching. The life expectancy in a real working voltage domain was searched for, and it presumed that a difference arose in these.

収録刊行物

• 表面科学

  表面科学 27 (4), 245-248, 2006

  公益社団法人 日本表面科学会

詳細情報

• CRID: 1390001206458914304
• NII論文ID: 10018133441
• NII書誌ID: AN00334149
• DOI: 10.1380/jsssj.27.245
• COI: 1:CAS:528:DC%2BD28XlvV2rtbc%3D
• ISSN: 18814743
• ISSN: 03885321
• NDL書誌ID: 7930601
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7930601
• Web Site: http://www.jstage.jst.go.jp/article/jsssj/27/4/27_4_245/_pdf
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可