Time Dependent Dielectric Breakdown Measurement of Silicon Oxide using Scanning Probe Microscopy

• YASUE Takao

  Nakatsugawa Works, Mitsubishi Electric Corporation

• KAWAI Akira

  Nagaoka University of Technology

Bibliographic Information

Other Title

• 走査型プローブ顕微鏡によるシリコン酸化膜の経時絶縁破壊測定
• ソウサガタ プローブ ケンビキョウ ニ ヨル シリコン サンカ マク ノ ケイジ ゼツエン ハカイ ソクテイ

Abstract

The applicability of scanning probe microscopy (SPM) in the time dependent dielectric breakdown (TDDB) characteristics of silicon oxide has been demonstrated. Our study demonstrates that cumulative failure rates by the Weibull plot of TDDB measurement for a 9.5 nm-thick oxide were found to be straight lines and shape parameters were not based on bias voltages, but were almost fixed. These results indicate that failure mode within the limits of these voltage conditions has not changed and the SPM method is applicable to the evaluation of TDDB characteristics of silicon oxides. We also applied this method to oxides on a silicon substrate surface with and without damage by plasma etching. The life expectancy in a real working voltage domain was searched for, and it presumed that a difference arose in these.

Journal

• Hyomen Kagaku

  Hyomen Kagaku 27 (4), 245-248, 2006

  The Surface Science Society of Japan

Details

• CRID: 1390001206458914304
• NII Article ID: 10018133441
• NII Book ID: AN00334149
• DOI: 10.1380/jsssj.27.245
• COI: 1:CAS:528:DC%2BD28XlvV2rtbc%3D
• ISSN: 18814743
• ISSN: 03885321
• NDL BIB ID: 7930601
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7930601
• Web Site: http://www.jstage.jst.go.jp/article/jsssj/27/4/27_4_245/_pdf
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed