CdTe単結晶表面に対するプラズマエッチングとCd雰囲気中熱処理の効果 The Effects of Plasma Etching and Thermal Annealing Treatment on Single-crystal CdTe

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  The effect of H<sub>2</sub> plasma irradiation on a Cl-doped CdTe(111)B crystal was studied by comparing with that of the same irradiation but combined with a post-irradiation thermal annealing in a Cd ambient. Photoluminescence (PL) property of the CdTe crystal was found to be degraded by a two-months storage in a low-pressure desiccator. Electron spectroscopy for chemical analysis revealed that native oxide such as TeO<sub>2</sub> was formed on the CdTe surface after the storage. Irradiation by H<sub>2</sub> plasma was effective to remove the oxide completely. However, the PL property after the H<sub>2</sub> plasma irradiation did not recover the original one due to the formation of Cd vacancy by ion bombardment. The post-irradiation annealing was found to be effective to recover the damage by ion bombardment.<br>

収録刊行物

  • 真空 = JOURNAL OF THE VACUUM SOCIETY OF JAPAN  

    真空 = JOURNAL OF THE VACUUM SOCIETY OF JAPAN 49(3), 126-128, 2006-03-20 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10018133460
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    7930691
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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