Si(111)表面上のBr吸着における多臭化物の形成過程 Formation Process of Poly-bromides in Br Adsorption on Si(111) Surface

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  The halogen-adsorbed Si(111) surfaces were investigated at the very low coverage with scanning tunneling microscope (STM) and surface differential reflectance (SDR). From SDR spectra, we determined the densities of the reacted adatom dangling bonds and the broken adatom back bonds. At the initial stage, STM images showed that the bromine atoms tended to be adsorbed on the site adjacent to the bromine adsorbed ones, in contrast to the behavior of chlorine atoms. The poly-bromide formation was found with STM above 0.1 ML. This coverage is consistent with that shown by SDR spectra, which revealed bromine atoms begin to break adatom back bonds at lower coverage than chlorine does. In the case of chlorine atoms, the back bond breaking does not take place until 0.3 ML. The origin of the different behavior was discussed in terms of the local modification of electronic states and the reactivity between Si surface and each halogen atom.<br>

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  • 真空 = JOURNAL OF THE VACUUM SOCIETY OF JAPAN  

    真空 = JOURNAL OF THE VACUUM SOCIETY OF JAPAN 49(3), 144-146, 2006-03-20 

    The Vacuum Society of Japan

参考文献:  13件

各種コード

  • NII論文ID(NAID)
    10018133513
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    7930948
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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