書誌事項
- タイトル別名
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- Dependence of Substrate DC Bias Voltage on Structural Properties of Nickel Thin Films Using Magnetron Sputtering with Multipolar Magnetic Plasma Confinement Assisted by Inductively Coupled Plasma
- ユウドウ ケツゴウ プラズマ シエンガタ タジュウ ジキョク マグネトロン スパッタホウ ニ ヨリ サクセイ シタ ニッケル ハクマク ノ キバン バイアス デンアツ イゾンセイ
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The dependence of substrate dc bias voltage on structural properties of Ni thin films using magnetron sputtering with multipolar magnetic plasma confinement (MMPC) assisted by inductively coupled plasma (ICP) was investigated. When magnetron sputtering with MMPC assisted by ICP was applied, the current flowing into the substrate due to Ar+ ions and sputtered Ni+ ions was increased. Ni thin films were deposited due to the ions energy controlled by each substrate dc bias voltage from 0 V to -80 V. The Ni thin films were analyzed by X-ray diffraction (XRD) and a transmission electron microscope (TEM). It is shown that applying the substrate dc bias voltage results in a significant change of the relative intensity of the orientation of (111) plane and an increase in the grain size.<br>
収録刊行物
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- 真空
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真空 49 (3), 156-158, 2006
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390001204063590784
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- NII論文ID
- 10018133548
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- NII書誌ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL書誌ID
- 7931027
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可