高分子ゲート絶縁膜を用いたフレキシブル有機電界効果トランジスタの作製 Fabrication of Flexible Organic Field Effect Transistor Constructed with a Polymer Gate Dielectric Layer

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抄録

  We have fabricated organic field effect transistors constructed with pentacene active layers grown by vacuum deposition, polycarbonate (PC) gate dielectric layers fabricated by spin-coating and polyethylene naphthalate thin films used as substrates. The surface morphology of PC thin films was observed by atomic force microscopy (AFM). It was confirmed that the surface morphology of PC thin films had smoothness at a molecular level, although there was a problem to keep a balance between insulation property and smoothness of the surface. From the performance of the obtained organic field effect transistor, the carrier mobility was estimated to be 0.7×10<sup>-3</sup> cm<sup>2</sup>/Vs, the on/off ratio to be 10<sup>2</sup> and the sub threshold voltage to be 32 V.<br>

収録刊行物

  • 真空 = JOURNAL OF THE VACUUM SOCIETY OF JAPAN  

    真空 = JOURNAL OF THE VACUUM SOCIETY OF JAPAN 49(3), 168-170, 2006-03-20 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10018133573
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    7931080
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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