Fabrication of Flexible Organic Field Effect Transistor Constructed with a Polymer Gate Dielectric Layer
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- JIN Yonglong
- Dept. of Electrical Eng., Aichi Inst. of Tech.
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- OCHIAI Shizuyasu
- Dept. of Electrical Eng., Aichi Inst. of Tech.
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- SAWA Goro
- Dept. of Electrical Eng., Aichi Inst. of Tech.
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- UCHIDA Yoshiyuki
- Dept. of Electrical Eng., Aichi Inst. of Tech.
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- KOJIMA Kenzo
- Dept. of Electrical Eng., Aichi Inst. of Tech.
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- OHASHI Asao
- Dept. of Electrical Eng., Aichi Inst. of Tech.
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- MIZUTANI Teruyoshi
- Dept. of Electrical Eng., Aichi Inst. of Tech.
Bibliographic Information
- Other Title
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- 高分子ゲート絶縁膜を用いたフレキシブル有機電界効果トランジスタの作製
- コウブンシ ゲート ゼツエン マク オ モチイタ フレキシブル ユウキ デンカイ コウカ トランジスタ ノ サクセイ
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Abstract
We have fabricated organic field effect transistors constructed with pentacene active layers grown by vacuum deposition, polycarbonate (PC) gate dielectric layers fabricated by spin-coating and polyethylene naphthalate thin films used as substrates. The surface morphology of PC thin films was observed by atomic force microscopy (AFM). It was confirmed that the surface morphology of PC thin films had smoothness at a molecular level, although there was a problem to keep a balance between insulation property and smoothness of the surface. From the performance of the obtained organic field effect transistor, the carrier mobility was estimated to be 0.7×10-3 cm2/Vs, the on/off ratio to be 102 and the sub threshold voltage to be 32 V.<br>
Journal
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- Shinku
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Shinku 49 (3), 168-170, 2006
The Vacuum Society of Japan
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Details
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- CRID
- 1390282679040308224
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- NII Article ID
- 10018133573
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- NII Book ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL BIB ID
- 7931080
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed