負イオン注入形成Geナノ粒子含有SiO_2薄膜の電気的特性 Electric Characteristics of Thin SiO_2 Film Embedded with Ge Nanoparticles Formed by Negative Ion Implantation

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著者

    • 洗 暢俊 ARAI Nobutoshi
    • 京都大学大学院工学研究科電子物性工学専攻 Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University
    • 辻 博司 TSUJI Hiroshi
    • 京都大学大学院工学研究科電子物性工学専攻 Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University
    • 後藤 直行 [他] GOTOH Naoyuki
    • 京都大学大学院工学研究科電子物性工学専攻 Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University
    • 箕谷 崇 MINOTANI Takashi
    • 京都大学大学院工学研究科電子物性工学専攻 Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University
    • 中塚 博之 NAKATSUKA Hiroyuki
    • 京都大学大学院工学研究科電子物性工学専攻 Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University
    • 小嶋 研史 KOJIMA Kenji
    • 京都大学大学院工学研究科電子物性工学専攻 Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University
    • 大西 均 OHNISHI Hitoshi
    • シャープ株式会社技術本部基盤技術研究所 Advanced Technology Research Laboratories, SHARP Corporation
    • 佐藤 剛 SATOH Takeshi
    • シャープ株式会社技術本部基盤技術研究所 Advanced Technology Research Laboratories, SHARP Corporation
    • 小滝 浩 KOTAKI Hiroshi
    • シャープ株式会社技術本部基盤技術研究所 Advanced Technology Research Laboratories, SHARP Corporation
    • 後藤 康仁 GOTOH Yasuhito
    • 京都大学大学院工学研究科電子物性工学専攻 Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University
    • 石川 順三 ISHIKAWA Junzo
    • 京都大学大学院工学研究科電子物性工学専攻 Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University

抄録

  Electric characteristics of 25-nm-SiO<sub>2</sub>/Si films embedded with Ge nanoparticles were investigated by CV method. Ge nanoparticles were formed by negative ion implantation and subsequent thermal annealing. Ge atoms in the SiO<sub>2</sub> were evaluated by high-resolution RBS and cross-sectional TEM. Ge atoms were implanted at 10 keV with 1×10<sup>15</sup> and 5×10<sup>15</sup> ions/cm<sup>2</sup>. The samples were annealed at 300, 500, 700 and 900°C for 1 h. After annealing at 900°C, Ge atoms diffused down to SiO<sub>2</sub>/Si interface, so the sample could not be evaluated by CV method. After annealing at 300°C, the voltage shift in the hysteresis of a CV curve was very small, so it could not be applied to the memory devices. While after annealing at 500°C, the voltage shifts of both samples implanted with doses of 1×10<sup>15</sup> and 5×10<sup>15</sup> ions/cm<sup>2</sup> were wide. Calculations of charge and nanoparticle intensity from flat band shift and from implanted Ge dose show that each nanoparticle with about 3-nm diameter has only one electron. These results suggest that thin SiO<sub>2</sub> films embedded with Ge nanoparticles formed with negative ion implantation can be applied to the memory devices.<br>

収録刊行物

  • 真空 = JOURNAL OF THE VACUUM SOCIETY OF JAPAN  

    真空 = JOURNAL OF THE VACUUM SOCIETY OF JAPAN 49(3), 180-182, 2006-03-20 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10018133613
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    7931189
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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