Electric Characteristics of Thin SiO2 Film Embedded with Ge Nanoparticles Formed by Negative Ion Implantation

• ARAI Nobutoshi

  Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University Advanced Technology Research Laboratories, SHARP Corporation

• TSUJI Hiroshi

  Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University

• GOTOH Naoyuki

  Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University

• MINOTANI Takashi

  Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University

• NAKATSUKA Hiroyuki

  Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University

• KOJIMA Kenji

  Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University

• YANAGITANI Toshio

  Advanced Technology Research Laboratories, SHARP Corporation

• OKUMINE Tetsuya

  Advanced Technology Research Laboratories, SHARP Corporation

• OHNISHI Hitoshi

  Advanced Technology Research Laboratories, SHARP Corporation

• SATOH Takeshi

  Advanced Technology Research Laboratories, SHARP Corporation

• HARADA Masatomi

  Advanced Technology Research Laboratories, SHARP Corporation

• ADACHI Kouichirou

  Advanced Technology Research Laboratories, SHARP Corporation

• KOTAKI Hiroshi

  Advanced Technology Research Laboratories, SHARP Corporation

• GOTOH Yasuhito

  Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University

• ISHIKAWA Junzo

  Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University

Bibliographic Information

Other Title

• 負イオン注入形成Ｇｅナノ粒子含有ＳｉＯ２薄膜の電気的特性
• フイオン チュウニュウ ケイセイ Ge ナノ リュウシ ガンユウ SiO2 ハクマク ノ デンキテキ トクセイ

Abstract

  Electric characteristics of 25-nm-SiO₂/Si films embedded with Ge nanoparticles were investigated by CV method. Ge nanoparticles were formed by negative ion implantation and subsequent thermal annealing. Ge atoms in the SiO₂ were evaluated by high-resolution RBS and cross-sectional TEM. Ge atoms were implanted at 10 keV with 1×10¹⁵ and 5×10¹⁵ ions/cm². The samples were annealed at 300, 500, 700 and 900°C for 1 h. After annealing at 900°C, Ge atoms diffused down to SiO₂/Si interface, so the sample could not be evaluated by CV method. After annealing at 300°C, the voltage shift in the hysteresis of a CV curve was very small, so it could not be applied to the memory devices. While after annealing at 500°C, the voltage shifts of both samples implanted with doses of 1×10¹⁵ and 5×10¹⁵ ions/cm² were wide. Calculations of charge and nanoparticle intensity from flat band shift and from implanted Ge dose show that each nanoparticle with about 3-nm diameter has only one electron. These results suggest that thin SiO₂ films embedded with Ge nanoparticles formed with negative ion implantation can be applied to the memory devices.<br>

Journal

• Shinku

  Shinku 49 (3), 180-182, 2006

  The Vacuum Society of Japan

Keywords

• Electrical and Electronic Engineering
• Surfaces, Coatings and Films
• Condensed Matter Physics

Details

• CRID: 1390001204063703168
• NII Article ID: 10018133613
• NII Book ID: AN00119871
• DOI: 10.3131/jvsj.49.180
• ISSN: 18809413
• ISSN: 05598516
• NDL BIB ID: 7931189
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7931189
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed