Study on Intrinsic Loss of Unipola Power Device due to Main Junction Capacitance

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The converters with high power output density has been envisioned for next generation. The key to realize that is operation at very high switching speed and utilization of ultra low loss of power semiconductor devices in wide bandgap semiconductor e.g. Silicon Carbide and superjuction. The power loss by main junction capacitance, C<sub>oss</sub> intrinsically structured inside the device has been reported but the quantitative study is not adequate. In this study, for 3kW converters, the loss by C<sub>oss</sub> is theoretically and experimentally proved using heat measurement with resistive and inductive load chopper circuit with 500V Si-MOSFET and 600V Silicon Carbide Schottky barrier diode. Moreover since large loss remained other than already known loss factors has been quantitatively revealed, and it is suggested that this remained loss will be a next target for further reduction of switching loss.

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  • 電気学会論文誌. D, 産業応用部門誌 = The transactions of the Institute of Electrical Engineers of Japan. D, A publication of Industry Applications Society  

    電気学会論文誌. D, 産業応用部門誌 = The transactions of the Institute of Electrical Engineers of Japan. D, A publication of Industry Applications Society 126(7), 941-945, 2006-07-01 

    The Institute of Electrical Engineers of Japan

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各種コード

  • NII論文ID(NAID)
    10018146802
  • NII書誌ID(NCID)
    AN10012320
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    09136339
  • NDL 記事登録ID
    8023689
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-1608
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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