Phosphorous Gettering on Spherical Si Solar Cells Fabricated by Dropping Method

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Si spheres for spherical Si solar cells are produced by a dropping method. In the current state, the Si spheres are generally multicrystalline. In the dropping method, some impurities, mainly iron, which act as minority carrier recombination centers can be introduced in the Si spheres. To remove the impurities, phosphorous diffusion gettering (P-gettering) has been performed on spherical Si solar cells at 925 °C for 40 min. The effect of P-gettering was evaluated by solar cell performance and external quantum efficiency (EQE). The increase in the EQE of a long wavelength region was confirmed, which indicates that the deleterious impurities in a bulk region (not only the surface region) would be effectively reduced. Also, a minority carrier diffusion length estimated by the surface photovoltage method increased after P-gettering. Consequently, the efficiency of the spherical Si solar cell was improved. These results confirmed that P-gettering is effective to improve the solar cell performance of spherical Si solar cells.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(6A), 4939-4942, 2006-06-15

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018148243
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7940643
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  JSAP 
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