Anomalous Behavior of Schottky Barrier-Type Surface Photovoltages in Chromium-Contaminated N-Type Silicon Wafers Exposed to Air

抄録

A study of frequency dependent AC surface photovoltages (SPV) in n-type silicon (Si) wafers contaminated with an aqueous solution containing chromium (Cr) was carried out. Immediately after rinsing (5 min exposure to air), the Cr ($\text{Cr$^{3+}$}+\text{3e$^{-}$} \rightarrow \text{Cr}$) deposited on the surfaces of the wafers had already been converted into Cr(OH)3 and/or Cr2O3. This Cr(OH)3–Si contact forms a Schottky barrier on n-type Si. This gives rise to depletion and/or an inversion layer formed at the surface, resulting in the appearance of a frequency-dependent AC SPV. With exposure to air, the AC SPV in n-type Si wafers was reduced. This happens because Cr is oxidized and the Cr(OH)3 becomes Cr2O3 through the reaction $\text{2Cr(OH)$_{3}$} \rightarrow \text{Cr$_{2}$O$_{3}$}+\text{3H$_{2}$O}$, thus reducing the Schottky barrier height. Another factor is compensation by the positive oxide charge formed when the surface goes into accumulation, resulting in a suppression of the AC SPV in n-type Si. A schematic band diagram of the Schottky barrier was developed, and the barrier height was calculated to be 0.75 eV for n-type Si.

収録刊行物

• Japanese journal of applied physics. Pt. 1, Regular papers & short notes

Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(6A), 4982-4984, 2006-06-15

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

各種コード

• NII論文ID(NAID)
10018148388
• NII書誌ID(NCID)
AA10457675
• 本文言語コード
EN
• 資料種別
SHO
• 雑誌種別
大学紀要
• ISSN
0021-4922
• NDL 記事登録ID
7940770
• NDL 雑誌分類
ZM35(科学技術--物理学)
• NDL 請求記号
Z53-A375
• データ提供元
CJP書誌  NDL  JSAP

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