# Highly Conformal Hafnium Silicate Film Growth by Atomic-Layer Chemical Vapor Deposition using a New Combination of Precursors: Hf(OC(CH3)3)4 and Si(N(CH3)(C2H5))4

## 抄録

Highly conformal hafnium silicate films were deposited by atomic-layer chemical vapor deposition (ALCVD) using a new combination of precursors: hafnium tetra-tert-butoxide [Hf(OC(CH3)3)4] and tetrakis-ethylmethylaminosilane [Si(N(CH3)(C2H5))4]. The self-limiting nature of ALCVD film growth was demonstrated by showing the convergent growth rate at high concentrations of the precursors. The growth rate was 3.8 Å/cycle at 220 °C, which was relatively high compared with results using other precursors. It was also shown that we could control the $\text{Hf}/(\text{Hf}+\text{Si})$ composition ratio in the high $\text{Hf}/(\text{Hf}+\text{Si})$ ratio region. The carbon impurity concentrations of the films made were lower than the X-ray photoelectron spectroscopy (XPS) detection limit (${<}1$ at. %). Hafnium silicate films with ${\sim}80$% HfO2 were amorphous up to 700 °C. The hafnium silicate films deposited at 220 °C have an average dielectric constant of 9.8 with a flatband voltage ($V_{\text{fb}}$) and a hysteresis voltage in capacitance–voltage ($C$–$V$) measurements of 0 V and less than 0.18 V, respectively.

## 収録刊行物

• Japanese journal of applied physics. Pt. 1, Regular papers & short notes

Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(6A), 5174-5177, 2006-06-15

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

## 各種コード

• NII論文ID(NAID)
10018149056
• NII書誌ID(NCID)
AA10457675
• 本文言語コード
EN
• 資料種別
ART
• 雑誌種別
大学紀要
• ISSN
0021-4922
• NDL 記事登録ID
7941336
• NDL 雑誌分類
ZM35(科学技術--物理学)
• NDL 請求記号
Z53-A375
• データ提供元
CJP書誌  CJP引用  NDL  JSAP

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