# Highly Conformal Hafnium Silicate Film Growth by Atomic-Layer Chemical Vapor Deposition using a New Combination of Precursors: Hf(OC(CH3)3)4 and Si(N(CH3)(C2H5))4

## Abstract

Highly conformal hafnium silicate films were deposited by atomic-layer chemical vapor deposition (ALCVD) using a new combination of precursors: hafnium tetra-tert-butoxide [Hf(OC(CH3)3)4] and tetrakis-ethylmethylaminosilane [Si(N(CH3)(C2H5))4]. The self-limiting nature of ALCVD film growth was demonstrated by showing the convergent growth rate at high concentrations of the precursors. The growth rate was 3.8 Å/cycle at 220 °C, which was relatively high compared with results using other precursors. It was also shown that we could control the $\text{Hf}/(\text{Hf}+\text{Si})$ composition ratio in the high $\text{Hf}/(\text{Hf}+\text{Si})$ ratio region. The carbon impurity concentrations of the films made were lower than the X-ray photoelectron spectroscopy (XPS) detection limit (${<}1$ at. %). Hafnium silicate films with ${\sim}80$% HfO2 were amorphous up to 700 °C. The hafnium silicate films deposited at 220 °C have an average dielectric constant of 9.8 with a flatband voltage ($V_{\text{fb}}$) and a hysteresis voltage in capacitance–voltage ($C$–$V$) measurements of 0 V and less than 0.18 V, respectively.

## Journal

• Jpn J Appl Phys

Jpn J Appl Phys 45(6A), 5174-5177, 2006-06-15

INSTITUTE OF PURE AND APPLIED PHYSICS

## References:  35

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## Cited by:  1

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## Codes

• NII Article ID (NAID)
10018149056
• NII NACSIS-CAT ID (NCID)
AA10457675
• Text Lang
EN
• Article Type
Journal Article
• Journal Type
大学紀要
• ISSN
0021-4922
• NDL Article ID
7941336
• NDL Source Classification
ZM35(科学技術--物理学)
• NDL Call No.
Z53-A375
• Data Source
CJP  CJPref  NDL  JSAP

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