Highly Conformal Hafnium Silicate Film Growth by Atomic-Layer Chemical Vapor Deposition using a New Combination of Precursors: Hf(OC(CH3)3)4 and Si(N(CH3)(C2H5))4

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著者

    • Kim Jaehyun Kim Jaehyun
    • Electrical and Computer Engineering Division, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-dong, Nam-gu, Pohang, Kyungbuk 790-784, Korea
    • Yong Kijung Yong Kijung
    • Electrical and Computer Engineering Division, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-dong, Nam-gu, Pohang, Kyungbuk 790-784, Korea

抄録

Highly conformal hafnium silicate films were deposited by atomic-layer chemical vapor deposition (ALCVD) using a new combination of precursors: hafnium tetra-tert-butoxide [Hf(OC(CH3)3)4] and tetrakis-ethylmethylaminosilane [Si(N(CH3)(C2H5))4]. The self-limiting nature of ALCVD film growth was demonstrated by showing the convergent growth rate at high concentrations of the precursors. The growth rate was 3.8 Å/cycle at 220 °C, which was relatively high compared with results using other precursors. It was also shown that we could control the $\text{Hf}/(\text{Hf}+\text{Si})$ composition ratio in the high $\text{Hf}/(\text{Hf}+\text{Si})$ ratio region. The carbon impurity concentrations of the films made were lower than the X-ray photoelectron spectroscopy (XPS) detection limit (${<}1$ at. %). Hafnium silicate films with ${\sim}80$% HfO2 were amorphous up to 700 °C. The hafnium silicate films deposited at 220 °C have an average dielectric constant of 9.8 with a flatband voltage ($V_{\text{fb}}$) and a hysteresis voltage in capacitance–voltage ($C$–$V$) measurements of 0 V and less than 0.18 V, respectively.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes  

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 45(6A), 5174-5177, 2006-06-15 

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10018149056
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7941336
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  CJP引用  NDL  JSAP 
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